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| SI1539DL Vishay Siliconix Complementary 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (W) 0.480 @ VGS = 10 V 0.700 @ VGS = 4.5 V 0.940 @ VGS = -10 V ID (A) 0.63 0.52 -0.45 -0.33 P-Channel -30 1.700 @ VGS = -4.5 V SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code RC G1 2 5 G2 XX YY Lot Traceability and Date Code Part # Code D2 3 4 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID IDM IS 0.25 0.30 0.16 0.23 0.27 0.14 -55 to 150 P-Channel 5 secs Steady State -30 "20 V - 0.45 -0.32 1.0 -0.25 0.30 0.16 -0.23 0.27 0.14 W _C -0.42 -0.31 A Symbol VDS VGS 5 secs Steady State 30 Unit 0.63 0.45 0.54 0.43 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71250 S-21374--Rev. B, 12-Aug-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 360 400 300 Maximum 415 460 350 Unit _C/W C/W 2-1 SI1539DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V " VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 85_C VDS = -24 V, VGS = 0 V, TJ = 85_C On-State Drain Currenta VDS w 5 V, VGS = 10 V ID(on) VDS p -5 V, VGS = -10 V VGS = 10 V, ID = 0.59 A Drain-Source On-State Resistancea VGS = -10 V, ID = -0.42 A rDS(on) VGS = 4.5 V, ID = 0.2 A VGS = -4.5 V, ID = -0.2 A Forward Transconductancea VDS = 15 V, ID = 0.59 A gfs VDS = -15 V, ID = -0.42 A IS = 0.23 A, VGS = 0 V VSD IS = -0.23 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 1.0 -1.0 0.410 0.800 0.600 1.5 0.75 0.5 0.8 -0.86 1.2 -1.2 V S 0.480 0.940 0.700 1.700 W A 1.0 V -1.0 "100 "100 1 -1 5 -5 mA m nA Symbol Test Condition Min Typ Max Unit Gate-Body Leakage IGSS Diode Forward Voltagea Dynamicb N-Ch Total Gate Charge Qg N-Channel VDS = 15 V, VGS = 10 V, ID = 0.59 A Gate-Source Charge Qgs P-Channel VDS = -15 V, VGS = -10 V, ID = -0.42 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time td(on) N-Channel VDD = 15 V, RL = 30 W ID ^ 0.5 A, VGEN = 10 V, RG = 6 W P-Channel VDD = -15 V, RL = 30 W ID ^ -0.5 A, VGEN = -10 V, RG = 6 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Source-Drain Reverse Recovery Time tf IF = 0.23 A, di/dt = 100 A/ms trr IF = -0.23 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 0.86 0.9 0.24 nC 0.21 0.08 0.17 5 4 8 8 8 5 7 7 15 20 10 10 15 15 15 10 15 15 30 40 ns 1.4 1.4 Gate-Drain Charge Qgd Rise Time tr Turn-Off Delay Time td(off) Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2-2 Document Number: 71250 S-21374--Rev. B, 12-Aug-02 SI1539DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 10 thru 4 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 0.8 1.0 N-CHANNEL Transfer Characteristics 0.6 0.6 0.4 3V 0.2 0.4 TC = 125_C 0.2 25_C -55 _C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.6 r DS(on) - On-Resistance ( W ) 60 Capacitance 50 1.2 C - Capacitance (pF) Ciss 40 0.8 30 Coss VGS = 4.5 V VGS = 10 V 20 0.4 10 Crss 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 0.59 A 8 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 0.59 A r DS(on) - On-Resistance (W) (Normalized) 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0.0 0.2 0.4 0.6 0.8 1.0 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71250 S-21374--Rev. B, 12-Aug-02 www.vishay.com 2-3 SI1539DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1 1.8 N-CHANNEL On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 1.5 I S - Source Current (A) 1.2 ID = 0.59 A TJ = 150_C 0.9 TJ = 25_C 0.6 0.3 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 5 Single Pulse Power 0.2 V GS(th) Variance (V) 4 ID = 250 mA Power (W) 3 -0.0 -0.2 2 -0.4 1 -0.6 -50 -25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA =400_C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 2-4 Document Number: 71250 S-21374--Rev. B, 12-Aug-02 SI1539DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 N-CHANNEL 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 10 thru 5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 0.8 1.0 P-CHANNEL Transfer Characteristics TC = -55_C 25_C 0.6 4V 0.6 125_C 0.4 0.4 0.2 2V 3V 0.2 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 3.0 r DS(on) - On-Resistance ( W ) 80 Capacitance 2.5 C - Capacitance (pF) 60 Ciss 2.0 VGS = 4.5 V 1.5 VGS = 10 V 40 1.0 Coss 20 0.5 Crss 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Document Number: 71250 S-21374--Rev. B, 12-Aug-02 www.vishay.com 2-5 SI1539DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 0.42 A 8 1.6 VGS = 10 V ID = 0.42 A 1.4 P-CHANNEL On-Resistance vs. Junction Temperature 6 r DS(on) - On-Resistance (W) (Normalized) 0.4 0.6 0.8 1.0 1.2 4 1.0 2 0.8 0 0.0 0.2 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 1 3.0 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 2.5 I S - Source Current (A) 2.0 ID = 0.42 A TJ = 150_C 1.5 1.0 0.5 TJ = 25_C 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 5 Single Pulse Power 0.4 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 4 3 0.0 2 -0.2 1 -0.4 -50 -25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) www.vishay.com 2-6 Document Number: 71250 S-21374--Rev. B, 12-Aug-02 SI1539DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 P-CHANNEL 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 400_C/W Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71250 S-21374--Rev. B, 12-Aug-02 www.vishay.com 2-7 |
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